High-Performance All-Optical Modulator Based on Graphene-HBN Heterostructures

Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits interaction with guided optical modes, which results in a high switching energy per bit or low modulation efficiencies. Nonetheless, it is possible to enhance the of light graphene by nanophotonic means. Herein, we present practical design modulator that based on and hexagonal boron nitride (hBN) heterostructures are hybrid integrated into silicon slot waveguides. Using this device, extinction ratio (ER) 7.3 dB, ultralow insertion loss (IL) <0.6 energy-efficient (<0.33 pJ/bit) attainable 20{\mu}m long double layer graphene. In addition, device performs recovery time <600 fs, could potentially be employed high-performance ultra-high bandwidth hundreds GHz. Moreover, efficiency further enhanced stacking additional layers graphene-hBN heterostructures, while theoretically maintaining response. The proposed exhibits highly promising performance metrics, expected serve needs next-generation computing systems.